2011/08/22 ver.2 page 1 SPN3009 n-channel enhancement mode mosfet description applications the SPN3009 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. the SPN3009 has b een designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. z high frequency synchronous buck converter z dc/dc power system z load switch features pin configuration to-252 part marking ? 30v/30a, r ds(on) = 7.5m ? @v gs =10v ? 30v/15a,r ds(on) = 11.0m ? @v gs =4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252 package design
2011/08/22 ver.2 page 2 SPN3009 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN3009t252rgb to-252 SPN3009 SPN3009t252rgb : tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 20 v t a =25 51 continuous drain current t a =100 i d 36 a pulsed drain current i dm 120 a avalanche current i as 34 a single pulse avalanche energy eas 130 mj power dissipation t a =25 p d 2.42 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient (t Q 10s) r ja 62 /w electrical characteristics
2011/08/22 ver.2 page 3 SPN3009 n-channel enhancement mode mosfet (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =24v,v gs =0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0v, t j =55 5 ua on-state drain current i d(on) v ds 5v,v gs =10v 51 a v gs = 10v,i d =30a 7.5 9 drain-source on-resistance r ds(on) v gs =4.5v,i d =15a 11 13.5 m ? forward transconductance gfs v ds =5v,i d =30a 42 s diode forward voltage v sd i s =1a,v gs =0v 1 v single pulse avalanche energy eas v dd =25v, l=0.1mh, i as =20a 45 mj dynamic total gate charge q g 10.6 gate-source charge q gs 4.2 gate-drain charge q gd v ds =15v,v gs =4.5v i d = 15a 4 nc input capacitance c iss 1127 output capacitance c oss 194 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 78 pf t d(on) 6.4 13 turn-on time t r 70 127 t d(off) 22.5 45 turn-off time t f v dd =15v, i d =15a,v gen =10v r g =3.3 ? 8 18 ns typical characteristics
2011/08/22 ver.2 page 4 SPN3009 n-channel enhancement mode mosfet fig. 1 typical output characteristics fig. 2 transfer characteristics fig. 3 on-resistance vs gate voltage fig. 4 gate charge characteristics fig. 5 on-resistance vs junction temp fig. 6 vgs vs junction temperature
2011/08/22 ver.2 page 5 SPN3009 n-channel enhancement mode mosfet typical characteristics fig. 7 typical capacitance characteristic s fig. 8 maximum safe operation area fig. 9 effective transient thermal impedance fig. 10 switching time waveform fig. 11 unclamped inductive waveform
2011/08/22 ver.2 page 6 SPN3009 n-channel enhancement mode mosfet to-252 package outline
2011/08/22 ver.2 page 7 SPN3009 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2011 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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